Low cost high voltage GaN polarization superjunction field effect transistors

Gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

The gate-voltage dependence of the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors has been investigated in the linear and subsaturation regimes of operation. Analysis of experimental data for different transistors indicates that the noise spectrum is dominated by the channel noise rather than noise originated in series resistors. The obtained results shed new light on...

Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

15.4 Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are promising for high-voltage power switching applications. A concern with this new device technology is oxide reliability under prolonged high-field and high-temperature conditions. This paper studies an important aspect of oxide reliability, time-dependent dielectric breakdown (TDDB) in GaN MIS-HEMTs. We have de...

High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications

The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

We have studied experimentally the effect of ambient temperature on performance of the surface-passivated Al0.2Ga0.8N/GaN heterostructure field-effect transistors in the temperature range from 25°C to 250°C. The measured data have been compared with physics-based modeling of the GaN transistor characteristics under different ambient temperatures. The experimental data, showing about 33% degrada...